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• W2057985568 abstract "AlGaN growth on a (0001) sapphire substrate was investigated to realize a droplet-free buffer layer with the +c polarity by molecular beam epitaxy (MBE). By applying an aluminum flux intensity smaller than that of the effective nitrogen radical species for growth, a droplet-free AlGaN surface was achieved even under group-III-rich growth conditions. We found that lattice polarity depends on flux intensity ratio during the growth. The AlGaN buffer layer process is a promising method to achieve both the +c polarity and droplet-free growth of III-nitride films by MBE, which is essential for the improved performance of III-nitride semiconductor devices." @default.
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• W2057985568 date "2004-03-01" @default.
• W2057985568 modified "2023-10-18" @default.
• W2057985568 title "Growth of Droplet-Free AlGaN Buffer Layer with +c Polarity by Molecular Beam Epitaxy" @default.
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• W2057985568 doi "https://doi.org/10.1143/jjap.43.952" @default.
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