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- W2058018609 abstract "The reconstructions of the 6H-SiC(0001) surface under both Si-rich and C-rich conditions were studied using field ion-scanning tunneling microscopy (FI–STM). The sample was cleaned by in situ Si beam etching at 900–1000 °C. The as-cleaned surface showed a (√3×√3) structure. The Si-rich phases were produced by annealing the sample in a Si flux. With increasing Si concentration, (2×2), (2√3×6√3), (3×3), and (7×7) reconstructions were observed. Reaction of the Si-rich phases with C2H2 molecules at 1050 °C resulted in the formation of a C-rich surface, which exhibited a (2×2)/(6×6) reconstruction. A structure model for (√3×√3) reconstruction is proposed, and possible applications of using the surface reconstruction to selectively grow SiC polytype is discussed." @default.
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- W2058018609 title "Si- and C-rich structure of the 6H-SiC(0001) surface" @default.
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- W2058018609 doi "https://doi.org/10.1116/1.589455" @default.
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