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- W2058048419 abstract "AlN films were deposited on quartz and silicon substrates by d.c. magnetron sputtering of an Al target in argon + nitrogen plasma (20–100 vol.% nitrogen). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) studies indicated the films to be polycrystalline for higher nitrogen (>30 vol.%) and amorphous for lower nitrogen in the sputtering gas. Direct optical transition with high band gap ( E g ≥ 5 eV) was observed for the polycrystalline films while for amorphous films indirect transition could be identified. The absorption band tail at photon energies less than the band gap energy ( E g ) in the polycrystalline films could be analysed by considering the contribution of stress (1.4–3.0 GPa) and strain ((3–7) × 10 −3 ) due to band gap fluctuation in the grain boundary region. The effects of grain boundary trap state density ( Q t ≈ (2.0–3.8) × 10 12 cm −2 ) on the optical properties of the polycrystalline films were ascertained. The microstructural information, obtained from the scanning electron microscopy, TEM and XRD studies, were correlated with the above measurements." @default.
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- W2058048419 date "1997-08-01" @default.
- W2058048419 modified "2023-09-24" @default.
- W2058048419 title "Optical characterization of AlN films: measurement of stress" @default.
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- W2058048419 doi "https://doi.org/10.1016/s0254-0584(97)80183-6" @default.
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