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- W2058064013 abstract "The current-voltage (I-V) characteristics and threshold voltage ( V t ) of implanted-polycrystalline surface channel complementary metal-oxide-semiconductor field-effect transistors (CMOSFETs) with and without titanium-polycided polycrystalline silicon gate structures are compared. We find that the earlier punch-through phenomenon is caused by boron (B) penetration into the gate oxide and channel regions in the boron-implanted p + -poly-silicon-gated device, and this degradation is reduced by using titanium-polycide (Ti-polycide) technology. However, this process results in a significant V t shift. In addition, a detailed model for the kinetics of the B redistri-bution and the interface state generation during Ti-salicidation and after post thermal annealing is proposed to explain these phenomena." @default.
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- W2058064013 date "1995-08-01" @default.
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- W2058064013 title "Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology" @default.
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- W2058064013 doi "https://doi.org/10.1143/jjap.34.l978" @default.
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