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• W2058160939 abstract "We present the “selective tching” model where we assume that the etching rate of a high power hydrogen plasma is faster for the disordered material than for the crystalline phase. We have verified directly, in a separate experiment, that the etching by a hydrogen plasma increases the proportion of the crystalline phase of a deposited film. We can thus explain some results that would be difficult to understand without this model. For example: - The succession of a series of thick depositions (more than 10 atomic layers) and of deep etchings produces a microcrystalline material. This would be difficult to explain in terms of Vepřek's model of a chemical quasi-equilibrium between the solid and the plasma. - The deposited films of μc-Si are always very porous, both on the surface and in the bulk: the removal of the disordered material leaves a certain amount of voids which are not completely refilled by the following deposition. In the quasi-equilibrium language, one should expect, on the contrary, the deposition of a compact material containing no voids." @default.
• W2058160939 created "2016-06-24" @default.
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• W2058160939 date "1993-12-01" @default.
• W2058160939 modified "2023-10-14" @default.
• W2058160939 title "Plasma deposition of microcrystalline silicon: the selective etching model" @default.
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• W2058160939 doi "https://doi.org/10.1016/0022-3093(93)91164-x" @default.
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