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- W2058192632 abstract "Epitaxial layers grown by hydride vapor phase epitaxy using N2 as a carrier gas were studied. Charge transport measurements at temperatures as high as 416 K and as low as 38 K were made on layers grown on (100)-, (311)B-, (511)B-, and (110)- oriented substrates. Resistivities in the range 4×106–2×1010 Ω cm were obtained in all cases except for growth on (311)B surfaces. In that case resistivities were in the range 1×103–5×107 Ω cm. Detailed fitting to I-V data was done using a two trap model, and a good fit was obtained if traps lying at 0.68 and 0.30 eV below the conduction band were included. The deeper lying trap concentration which gave the best fit was in the range 1–8×1015 cm−3. This level corresponds to the Fe3+⇄Fe2+ transition which is usually observed in semi-insulating bulk and MOCVD grown Fe-doped InP and which compensates the background donors. A concentration lying in the range 2–20×1018 cm−3 must be used for the 0.30-eV trap to produce a good fit. The presence of this trap at such a large concentration also explains our observations that the Fermi level moves up in the band gap as the temperature is decreased. We speculate that this trap is N impurity related. Secondary-ion-mass spectrometry results rule out the possibility that the 0.30-eV trap is Fe related. Low-temperature photoluminescence spectra typical of Fe-doped InP were obtained and revealed a broad band at 1.1 eV. Such a band has been commonly reported for bulk InP:Fe and is usually assigned to an Fe related deep level. Our results suggest that this assignment may not be correct for our material." @default.
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- W2058192632 date "1989-12-15" @default.
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- W2058192632 title "Semi-insulating properties of Fe-doped InP grown by hydride vapor phase epitaxy" @default.
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- W2058192632 doi "https://doi.org/10.1063/1.343611" @default.
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