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• W2058268059 abstract "The chemistry and physics of thin films and interfaces govern the behavior of microelectronic devices. In this review, we examine how different spectroscopies, in particular X-ray photoemission spectroscopy (XPS), have been used to determine the physics and chemistry of a variety of thin films and interfaces commonly found in microelectronic devices. Electron spectroscopies are particularly attractive because the electron escape depths are comparable to the thickness of the films, allowing one to probe the bulk of the film and the interfaces simultaneously. We also give examples of how one can use the maximum-entropy method, a relatively straightforward analysis technique, to derive composition depth profiles of thin films from angle-resolved XPS data. Two technologically important classes of thin films are discussed. First, we examine thin inorganic films that are important high dielectric constant materials for CMOS devices or DRAM applications. Second, we discuss metal/polymer interfaces that are important in low dielectric constant device packaging. We conclude by discussing future developments and applications." @default.
• W2058268059 created "2016-06-24" @default.
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• W2058268059 date "2002-01-01" @default.
• W2058268059 modified "2023-10-14" @default.
• W2058268059 title "Thin films and interfaces in microelectronics: composition and chemistry as function of depth" @default.
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• W2058268059 doi "https://doi.org/10.1016/s0079-6816(01)00049-1" @default.
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