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- W2058360100 abstract "Jet Vapor DepositionTM (JVDTM) uses high-speed inert gas jets to carry film components to substrates. JVD has been applied to a wide range of thin and thick film applications, demonstrating an adaptability to new problems, and a versatility for making complex materials quickly and economically. JVD's jet in low vacuum strategy is applicable to many kinds of thin film. In addition to simple metal films, these include multilayers, alloys, multicomponent oxides and nitrides, organic and host–guest films, cluster and cluster embedded films. Mechanisms for relative motion between jet source and substrates, combined with the use of several jets simultaneously or in sequence, allow design of processes for substrates of many sizes and shapes, for production of many complex film materials. JVD metal sources are based on techniques such as glow discharge sputtering or direct vaporization, which can deposit nearly every metal in the Periodic Table, with no toxic metal precursors or harmful exhausts. Solder layer deposition in particular is naturally suited to JVD, as a consequence of high deposition rates, short pump down times, efficient material use, and plasma precleaning. Much of JVD's versatility arises from the use of independent jets and relative motion schemes to give multilayer structures. These capabilities have now been focused on the vapor deposition of solder metals and alloys, addressing a growing need in microelectronic packaging technology. JVD can provide not only the solder layers, but also the required adhesion, diffusion barrier, and protective cap layers." @default.
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- W2058360100 date "1993-08-01" @default.
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- W2058360100 title "Structure and properties of jet vapor deposited aluminum-aluminum oxide nanoscale laminates" @default.
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- W2058360100 doi "https://doi.org/10.1016/0956-716x(93)90502-j" @default.
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