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• W2058373568 abstract "Applications of spectroscopic phase-modulated ellipsometry (SPME), from UV to IR, to the growth of ultrathin films are reviewed. In the visible and near-UV, because of its fast time resolution, this technique has been extensively used to study the growth of plasma-deposited amorphous and microcrystalline semiconductors. The deposition of the first monolayers is found to be partly controlled by the film-substrate interaction which then evolves during the subsequent growth. Moreover, this technique can be successfully applied in order to identify the structure of a composite semiconductor (microcrystalline) during the growth of the first monolayers. In the IR, SPME has been more recently applied. The extreme sensitivity of this last technique to identify the vibrational properties of ultrathin samples is illustrated. In particular, it is shown that the structure of ultrathin samples can strongly differ from that of bulk materials." @default.
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• W2058373568 date "1988-09-01" @default.
• W2058373568 modified "2023-10-09" @default.
• W2058373568 title "Spectroscopic ellipsometry of ultrathin films: From UV to IR" @default.
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• W2058373568 doi "https://doi.org/10.1016/0040-6090(88)90420-8" @default.
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