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- W2058384733 abstract "In order to study the spin dependent transport mechanisms through a small collection of nano-objects, we propose an original fabrication process of ferromagnetic nanoelectrodes (NEs). It consists in etching, through a negative PMMA mask patterned by high-dose HREBL exposure, the continuous ferromagnetic layer deposited in optimal conditions by sputtering under ultra high vacuum into couples of planar nanoelectrodes (NEs) separated by a nanometric gap. The main advantage of this approach is to guarantee a priori a better crystalline and magnetic quality of the NEs. In this paper, we describe in detail the impact of various parameters such as the electron beam dose, the coded layout NE gap, the layer development, the inversed PMMA removal as well as the ion beam etching parameters …. Observations by scanning electron microscopy (SEM) and atomic force microscopy (AFM) reveal that a 270 nC cm−1 is required to reverse the PMMA tone and provide a strong etching mask. NE gap from 5 nm to several tens of nm were obtained in a reproducible way. Moreover, thanks to the micropads created by a first HREBL stage, the samples were electrically bonded to a gold base plate allowing low current electrical measurements. These measurements on Co NEs showed that 5–20 nm range separated gaps have resistance in the range of hundreds GΩ to TΩ. These measurements correlated with energy dispersive spectroscopy (EDS) observations demonstrate that this process provides well adapted systems for the investigation of nano-object electrical properties." @default.
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- W2058384733 date "2004-07-01" @default.
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- W2058384733 title "Co nanoelectrodes for the study of spin dependent transport through nano-objects" @default.
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- W2058384733 doi "https://doi.org/10.1016/j.spmi.2004.08.027" @default.
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