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• W2058443574 startingPage "345" @default.
• W2058443574 abstract "Layer-by-layer oxidation of Si(001) surfaces has been studied by scanning reflection electron microscopy (SREM). The oxidation kinetics of the top and second layers were independently investigated from the change in oxygen Auger peak intensity calibrated from the SREM observation. A barrierless oxidation of the first subsurface layer, as well as oxygen chemisorption onto the top layer, occurs at room temperature. The energy barrier of the second-layer oxidation was found to be 0.3 eV. The initial oxidation kinetics are discussed based on first-principles calculations." @default.
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• W2058443574 date "1998-01-12" @default.
• W2058443574 modified "2023-09-30" @default.
• W2058443574 title "Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces" @default.
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• W2058443574 doi "https://doi.org/10.1103/physrevlett.80.345" @default.
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