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• W2058457560 abstract "Abstract Interfacial reactions for Ti deposition onto oxidized GaAs(110) have been studied for oxide thicknesses up to ∼ 10 A. The oxidized GaAs surfaces were produced by low-temperature X-ray-enhanced techniques using condensed N2O at 25 K. Titanium deposition at 300 K reduced the surface Ga and As oxides and a Ti oxide layer was formed. Schottky barrier studies showed that the Fermi level pinning position for these interfaces was closer to the valence band maximum than for Ti growth on clean, oxide-free GaAs(110). We also investigated Ti interactions when deposited directly onto solid O2 condensed on GaAs(110) at 25 K. In this case, the Ti adatoms were completely oxidized to Ti4+-like bonding when there was sufficient O2 for reaction. This process follows a thermodynamically favorable pathway and results in a GaAs surface with little semiconductor disruption." @default.
• W2058457560 created "2016-06-24" @default.
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• W2058457560 date "1991-08-01" @default.
• W2058457560 modified "2023-09-27" @default.
• W2058457560 title "Ti overlayer growth on oxidized GaAs(110) versus Ti oxidation on physisorbed O2 on GaAs(110) at 25 K" @default.
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• W2058457560 doi "https://doi.org/10.1016/0039-6028(91)90653-a" @default.
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