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- W2058495881 abstract "A static induction (SI) thyristor using a normally-off planar-gate structure in a low power class has been developed to be used as a power switching device in a three-phase inverter circuit. A 600 V-15 A class SI thyristor with very fast switching time (tgt, tgq) and low forward voltage drop (VTM) was designed and created. This design was performed with a reasonable wafer structure (n−/n/p+), an n− base carrier concentration and thickness, and a gate structure (gate diffusion length and gate-gate pitch). Microscopic processing was used to obtain this SI thyristor. The performance trade-off between turn-off time and forward voltage drop is controlled by a lifetime control process using proton irradiation that results in a very fast switching time with tgt of 500 ns and tgq of 500 ns with VTM of 1.5 V (at IT= 18 A). At a current level of IT = 18 A, the current density in the active area becomes 200 A/cm2, which indicates that the performance of the SI thyristor is superior to that of conventional IGBTs and MOSFETs." @default.
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- W2058495881 date "1996-01-01" @default.
- W2058495881 modified "2023-09-25" @default.
- W2058495881 title "Fast-switching-speed, low-forward-voltage-drop static induction (SI) thyristor" @default.
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- W2058495881 doi "https://doi.org/10.1002/eej.4391160310" @default.
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