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- W2058532076 abstract "Novel low energy molecular implantation of trimethyl phosphite was used to make rectifying junctions with indium contacts on boron doped diamond grown on silicon substrates. Diamond growth utilized hot-filament enhanced chemical vapor deposition (HFCVD). To our knowledge, this is the first report of molecular implantation on diamond and the only implanted junction with HFCVD polycrystalline diamond on silicon as the starting material. The rectifying contacts have high current density in forward bias and exhibit linear inverse squared capacitance-voltage characteristics at high frequencies, unlike other rectifying diamond junctions." @default.
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- W2058532076 date "1993-07-01" @default.
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- W2058532076 title "Rectifying contact formation with indium on polycrystallinep‐type hot‐filament chemical vapor deposited diamond utilizing molecular ion implantation" @default.
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- W2058532076 doi "https://doi.org/10.1063/1.355198" @default.
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