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- W2058532916 abstract "Electronic-structure and total-energy calculations are reported for the vacancy and the substitutional and interstitial S, Se, and Te impurities in Si. We identify several mechanisms of impurity-impurity interactions. This theoretical study also serves to determine the dominant defect site of chalcogen pairs as two substitutionals." @default.
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- W2058532916 date "1987-04-06" @default.
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- W2058532916 title "Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon" @default.
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- W2058532916 doi "https://doi.org/10.1103/physrevlett.58.1456" @default.
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