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• W2058541498 startingPage "542" @default.
• W2058541498 abstract "The structural and optical properties of nonpolar (1100) m-plane InGaN/GaN multiple quantum wells (MQWs), grown simultaneously on reduced-defect lateral epitaxially overgrown (LEO) m-plane GaN and high-defect-density planar m-plane GaN, were investigated. Atomic force microscopy images of the LEO m-plane MQW sample revealed the presence of smooth steps on the Ga-face wings. The presence of stacking-fault-related defects was observed in the window and the N-face wing regions. Transmission electron microscopy on the sample revealed abrupt quantum well interfaces. High-resolution X-ray diffraction analysis showed that the In incorporation was the same in the LEO sample and in the planar sample. Spot-excitation cathodoluminescence measurement revealed a similar emission wavelength for the nearly defect-free laterally overgrown regions and the defective window regions. However, the emission from the reduced-defect-density wings of the LEO m-plane GaN was more than six times stronger than the emission from the neighboring defective windows. Wide-area photoluminescence measurement showed a similar emission wavelength for the LEO sample and the planar MQW sample." @default.
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• W2058541498 date "2007-02-08" @default.
• W2058541498 modified "2023-09-23" @default.
• W2058541498 title "Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrownm-Plane GaN Films" @default.
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• W2058541498 doi "https://doi.org/10.1143/jjap.46.542" @default.
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