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- W2058596166 abstract "High-field transport in a semiconductor diode structure at room temperature is newly analyzed in a reflection–transmission regime. The Boltzmann equation with a constant electric field E is applied to a semiconductor channel of length L, and a pair of flux equations is analytically solved. For applied fields larger than ∼500 V/cm for silicon, the energy relaxation by the acoustic phonon scattering hardly catches up with the energy gain from the field, and the kinetic energy accumulates generating hot carriers. As a limiting case, in this paper we analyze carrier transport with elastic scattering and without energy relaxation. Current density proportional to √E/L is derived for a wide electric field range. At much higher fields, the ballistic transmission of carriers through the channel occurs, and current density tends to saturate. The result will find its application in sufficiently small systems, where energy relaxation by optical phonon scattering is not dominant." @default.
- W2058596166 created "2016-06-24" @default.
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- W2058596166 date "2009-03-23" @default.
- W2058596166 modified "2023-09-27" @default.
- W2058596166 title "New Solution to High-Field Transport in Semiconductors: I. Elastic Scattering without Energy Relaxation" @default.
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- W2058596166 doi "https://doi.org/10.1143/jjap.48.034503" @default.
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