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• W2058598305 abstract "Filament temperature is an important parameter in the hot-wire chemical vapor deposition (HW-CVD) process, affecting both the growth rate and electronic properties of the deposited thin films. Here we describe direct detection of gaseous free radicals produced as a function of filament temperature in the HW-CVD of amorphous silicon from silane. Radicals have been identified using vacuum ultraviolet (VUV) single photon ionization (SPI), with 118-nm light formed by the 9th harmonic of a Nd:YAG laser. The major silicon-containing gas-phase species identified by SPI during hot-wire activation of silane gas are Si, SiH3 and Si2H6. At the lower filament temperatures (900–1300°C) studied, consumption of silane is observed without significant formation of Si-containing radicals. The concentration of Si rises rapidly with filament temperature near Tfil=1300°C before leveling off at temperatures above 1800°C, while SiH3 and Si2H6 concentrations become significant only at the highest temperatures." @default.
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• W2058598305 date "2001-09-01" @default.
• W2058598305 modified "2023-10-17" @default.
• W2058598305 title "The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane" @default.
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• W2058598305 doi "https://doi.org/10.1016/s0040-6090(01)01203-2" @default.
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