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- W2058611438 abstract "This paper describes a new method for etching rate and resist profile control in O<SUB>2</SUB>RIE. The method simply determines the equivalent process conditions for different device layers with various areas of the material to be etched (etchable area) by introducing the ratio of the etchable area to the flow rate defined as S/F parameter. The concept of this method is that the gas composition controlled by S/F parameter determines both the etching rate and the resist profile under the constant energy flux densities of ions and energetic neutrals (ion impact density). S/F parameter is introduced through the extended expressions of Mogab's loading effect theory by applying two important characteristics in O<SUB>2</SUB>RIE: (1) The dominant etchant is oxygen molecules. (2) The etching rate is proportional to the ion impact density. The etching rate and the gas composition are expressed as functions of S/F parameter and the ion impact density in the extended expressions. The etching rate and the resist profile have been controlled by applying this method to wafer samples with various etchable areas. Furthermore, a linear relationship between the etching rate and the resist profile is clarified." @default.
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- W2058611438 date "1993-04-16" @default.
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- W2058611438 title "<title>New method for etching rate and resist profile control in O<formula><inf><roman>2</roman></inf></formula>RIE</title>" @default.
- W2058611438 doi "https://doi.org/10.1117/12.142908" @default.
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