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- W2058615978 abstract "Optical lithography at a 193-nm exposure wavelength has been under development at MIT Lincoln Laboratory for several years, supported by ARPA's Advanced Lithography Program. As part of this program, a prototype 193-nm full-field step-and-scan lithographic exposure system was built and installed in the clean-room facilities of MIT Lincoln Laboratory. This exposure system has now been in use for one year, supporting a program of photoresist and lithographic process development at 193 nm. This paper describes the characteristics of the exposure system and some of the advances in 193-nm lithography that have been achieved with the system." @default.
- W2058615978 created "2016-06-24" @default.
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- W2058615978 date "1995-05-26" @default.
- W2058615978 modified "2023-09-23" @default.
- W2058615978 title "<title>193-nm full-field step-and-scan prototype at MIT Lincoln Laboratory</title>" @default.
- W2058615978 doi "https://doi.org/10.1117/12.209242" @default.
- W2058615978 hasPublicationYear "1995" @default.
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