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• W2058639886 abstract "Monolithic lasers on Si are ideal for high-volume and large-scale electronic-photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590-1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior." @default.
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• W2058639886 date "2010-02-24" @default.
• W2058639886 modified "2023-10-10" @default.
• W2058639886 title "Ge-on-Si laser operating at room temperature" @default.
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• W2058639886 doi "https://doi.org/10.1364/ol.35.000679" @default.
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