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- W2058717737 abstract "Room temperature electron mobility of 1170cm2∕Vs is obtained in an undoped, lattice-matched, Al0.82In0.18N∕GaN field-effect transistor heterostructure, while keeping a high (2.6±0.3)×1013cm−2 electron gas density intrinsic to the Al0.82In0.18N∕GaN material system. This results in a two-dimensional sheet resistance of 210Ω∕◻. The high mobility of these layers, grown by metal-organic vapor phase epitaxy on sapphire substrate, is obtained thanks to the insertion of an optimized AlN interlayer, reducing the alloy related interface roughness scattering." @default.
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- W2058717737 date "2006-08-07" @default.
- W2058717737 modified "2023-09-30" @default.
- W2058717737 title "High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures" @default.
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- W2058717737 doi "https://doi.org/10.1063/1.2335390" @default.
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