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- W2058746594 abstract "The influence of technological impurities on radiation defect production in Si(p) was studied. Defects created by low dose implantation of C+, N+, O+, and Ne+ ions are investigated using DLTS method. From these mesurements deep level energies, capture cross sections, and annealing characteristics are determined. Some known defects are identified and some new ones are observed. No influence of the ion species on defect types can be detected. Es wird der Einfluß technologischer Verunreinigungen auf die Bildung von Strahlungsdefekten in Si(p) untersucht. Die Defekte, erzeugt durch eine Implantation mit geringen Dosen von C+, N+, O+ und Ne+-Ionen werden mit der DLTS-Methode untersucht. Es werden die Aktivierungs- energien, Wirkungsquerschnitte für Elektronen- oder Löcher-Einfang und Temperungs-Charak- teristiken bestimmt. Einige bekannte Defekte werden identifiziert und einige neue Defekte werden beobachtet. Es wird festgestellt, daßfi die lonenart keinen Einfluß auf den Typ der Defekte hat." @default.
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- W2058746594 date "1986-03-16" @default.
- W2058746594 modified "2023-09-27" @default.
- W2058746594 title "Deep Levels in Si(p) Implanted with C+, N+, O+, and Ne+ Ions Measured by DLTS Method" @default.
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- W2058746594 doi "https://doi.org/10.1002/pssa.2210940149" @default.
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