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• W2058871386 abstract "NiO–AZO thin films were prepared by DC and RF magnetron co-sputtering (MCS) system in an O2 atmosphere. The lowest resistivity of 1.75 × 10− 1 Ω cm was obtained in the film containing 1.94 mol% Al. The I–V measurements of the p–n junction ((NiO–AZO)/ITO) revealed rectifying characteristics, demonstrating that the film possess p-type conductivity. These results showed good agreement with the X-ray photoelectron spectroscopy (XPS) data by the higher bond enthalpy of Ni–O (382 ± 16.7 kJ/mol) than Zn–O (159 ± 4 kJ/mol). Moreover, the NiO–AZO films had a higher work function than NiO, highlighting the potential applications of transparent contact electrodes in Gallium nitride LEDs." @default.
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• W2058871386 date "2012-05-01" @default.
• W2058871386 modified "2023-10-17" @default.
• W2058871386 title "Characteristics of NiO–AZO thin films deposited by magnetron co-sputtering in an O2 atmosphere" @default.
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• W2058871386 doi "https://doi.org/10.1016/j.matlet.2012.01.021" @default.
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