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• W2059075858 endingPage "5354" @default.
• W2059075858 startingPage "5348" @default.
• W2059075858 abstract "High-resolution synchrotron radiation photoemission studies provide a detailed microscopic view of reactions at a refractory-metal/GaAs interface. Core-level and valence-band results indicate weak interaction between the Cr adlayer and the substrate at low coverage, i.e., no reaction products are observed although the Fermi level is pinned by ensuremath{sim}1 Ar{}. Instead, a metastable Cr overlayer forms and, at a critical coverage of ensuremath{sim}2 Ar{}, it triggers extensive substrate disruption. A model is presented to account for the reaction onset. Between ensuremath{sim}2 and ensuremath{sim}8 Ar{} the morphology changes rapidly, corresponding to atomic intermixing and formation of Cr--Ga and Cr--As bonds. Arsenic out-diffuses readily through the intermixed region and is present in chemical states corresponding to a Cr-As phase and surface-segregated As. Gallium out-diffuses very little, but it too forms a Cr-Ga phase. At coverages of ensuremath{sim}50 Ar{} the valence bands are dominated by Cr d states and resemble those of Cr metal, but core studies show that arsenic is still present in substantial quantities (ensuremath{sim}20% of original level)." @default.
• W2059075858 created "2016-06-24" @default.
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• W2059075858 date "1985-04-15" @default.
• W2059075858 modified "2023-10-05" @default.
• W2059075858 title "Critical development stages for the reactive Cr-GaAs(110) interface" @default.
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• W2059075858 doi "https://doi.org/10.1103/physrevb.31.5348" @default.
• W2059075858 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/9936500" @default.
• W2059075858 hasPublicationYear "1985" @default.
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