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- W2059135052 abstract "Ultra-thin gate oxides (<100 Å) have been grown on partially strain-compensated Si/Si1-x-yGexCy/Si heterolayers (with different carbon concentrations) using microwave O2-plasma. A MOS capacitor has been used for the characterization of grown oxides. Capacitance-voltage (C-V) profiling has been used to measure the apparent doping profile and thickness of the unconsumed Si-cap layer. A significant improvement in charge trapping properties, under Fowler-Nordheim (F-N) constant current stressing, has been observed for low carbon containing films. The valence band offsets (ΔEv) of Si/Si0.69Ge0.3C0.01 and Si/Si0.685Ge0.3C0.015 heterostructures have been extracted using the hole confinement characteristics. Incorporation of C lowers the valence band offset of the ternary alloy compared to those in Si1-xGex with the same Ge mole fraction." @default.
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- W2059135052 date "2000-06-23" @default.
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- W2059135052 title "Electrical characterization of ultra-thin gate oxides on Si/Si1-x-yGexCy/Si quantum well heterostructures" @default.
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- W2059135052 doi "https://doi.org/10.1088/0268-1242/15/7/317" @default.
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