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• W2059156976 abstract "HfNx-based films on SiO2/Si stack were grown by metal organic chemical vapor deposition (MOCVD) using tetrakis-diethylamido hafnium (TDEAHf) precursor and one of them was subsequently ex-situ annealed at an elevated temperature. The structural parameters of HfNx-based films, for the as-grown and the post-growth annealing samples, were characterized by Rutherford backscattering spectrometry (RBS), X-ray reflectometry (XRR), and atomic force microscopy (AFM). The RBS analysis of the post-growth annealing sample demonstrated that the N:Hf ratio of HfNx-based films decreases with an increase in depth. The XRR results also indicated that the N:Hf ratio in the HfNx-based films for the post-growth annealing sample at the surface was bigger than that located near the SiO2/Si stack. In addition, the surface root mean square (RMS) roughness of the post-growth annealing sample was also bigger than that of the as-grown sample." @default.
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• W2059156976 date "2008-04-01" @default.
• W2059156976 modified "2023-10-18" @default.
• W2059156976 title "Investigation of HfNx-based films by Rutherford backscattering spectrometry and X-ray reflectometry" @default.
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• W2059156976 doi "https://doi.org/10.1016/j.vacuum.2007.11.013" @default.
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