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- W2059275008 abstract "Amorphous thin SiO2 layers of different thickness on a Si(111) substrate were implanted with 12 keV 121Sb+ ions at fluences between 1×1015 cm−2 and 5×1015 cm−2, followed by thermal annealing. Formation of nanocrystal precipitates was established by high-resolution electron microscopy. The size and the distribution of the nanocrystals formed around the initial depth of implantation were studied in the as-implanted samples. The crystalline structure of these nanocrystals was also explored and the presence of antimony oxide Sb2O3 in the form of valentinite was proven. After the annealing step, the implanted material was observed to spread into a wider band and even to split into two discrete bands. The presence of antimony oxide in the intermediate phase (as-implanted layer of Sb) was confirmed using Fourier transform laser microprobe mass spectrometry. No definite signals of Sb2O3 could be detected in the annealed samples." @default.
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- W2059275008 date "2002-10-15" @default.
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- W2059275008 title "Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions" @default.
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- W2059275008 doi "https://doi.org/10.1063/1.1508425" @default.
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