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- W2059325907 abstract "Microstructures in p-CuInSe2 single crystals tailored by a strong electric field have been studied using the methods of local cathodoluminescence, electron-beam-induced current (EBIC), capacitance–voltage (C–V) characteristics, and deep-level transient spectroscopy (DLTS) spectra, and have been considered through a prism of elemental stability in the ternary compound. The shortest-wavelength cathodoluminescence radiation (ℏωm=1.023 eV) is observed from a layer of n type, the longer-wavelength radiation (ℏωm=1.01 and 0.973 eV), from p-type areas, both a p layer and the p-bulk crystal. The analysis of the spectra has allowed us to attribute experimental features to optical transitions associated with donor and acceptor levels of VCu, VSe, Cui point defects. The capacitance study by the C–V characteristics and DLTS spectra as well as the EBIC test have shown formation of diode-type or transistor-type microstructures. The |ND−NA| concentration profile, thermal activation, and emission energies of 22–25 and 170 meV, and a capture cross-section σh=2×10−19 cm2 of the deep donor level have been obtained for the microstructures. The two-stage resistive model has been considered for p–n and p–n–p junction formation." @default.
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- W2059325907 date "1997-11-15" @default.
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- W2059325907 title "p–n and p–n–p junction arrays in CuInSe2 crystals: Cathodoluminescence and capacitance study" @default.
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- W2059325907 doi "https://doi.org/10.1063/1.366321" @default.
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