FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2059367048> ?p ?o ?g. }

• W2059367048 endingPage "4124" @default.
• W2059367048 startingPage "4119" @default.
• W2059367048 abstract "A low-temperature atomic layer deposition technique for high-κ dielectric films on GaN templates was investigated for MOS applications. This improved growth method produced capacitance densities and a field effect mobility approaching 375 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs for ZrO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and 250 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs for HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films on GaN. Furthermore, the low density of dielectric-semiconductor interface traps confirmed a reliable cohesion between the high-κ and GaN. The improved gate dielectric deposition technique has the capabilities to improve the overall quality of GaN-based MOSFETs." @default.
• W2059367048 created "2016-06-24" @default.
• W2059367048 creator A5007208751 @default.
• W2059367048 creator A5057705376 @default.
• W2059367048 creator A5060302013 @default.
• W2059367048 creator A5068830652 @default.
• W2059367048 creator A5069534468 @default.
• W2059367048 creator A5090116401 @default.
• W2059367048 date "2013-12-01" @default.
• W2059367048 modified "2023-09-26" @default.
• W2059367048 title "Electrical Comparison of ${rm HfO}_{2}$ and ${rm ZrO}_{2}$ Gate Dielectrics on GaN" @default.
• W2059367048 cites W1497016567 @default.
• W2059367048 cites W1979889653 @default.
• W2059367048 cites W1995098301 @default.
• W2059367048 cites W2000904597 @default.
• W2059367048 cites W2001551336 @default.
• W2059367048 cites W2012455562 @default.
• W2059367048 cites W2022551088 @default.
• W2059367048 cites W2025946205 @default.
• W2059367048 cites W2064172671 @default.
• W2059367048 cites W2078588266 @default.
• W2059367048 cites W2110157882 @default.
• W2059367048 cites W2135081066 @default.
• W2059367048 cites W2137778525 @default.
• W2059367048 cites W2138391678 @default.
• W2059367048 cites W2139228516 @default.
• W2059367048 cites W2141186835 @default.
• W2059367048 cites W2147521755 @default.
• W2059367048 cites W2151628329 @default.
• W2059367048 cites W2162976434 @default.
• W2059367048 cites W2564192923 @default.
• W2059367048 doi "https://doi.org/10.1109/ted.2013.2283802" @default.
• W2059367048 hasPublicationYear "2013" @default.
• W2059367048 type Work @default.
• W2059367048 sameAs 2059367048 @default.
• W2059367048 citedByCount "19" @default.
• W2059367048 countsByYear W20593670482014 @default.
• W2059367048 countsByYear W20593670482015 @default.
• W2059367048 countsByYear W20593670482016 @default.
• W2059367048 countsByYear W20593670482017 @default.
• W2059367048 countsByYear W20593670482018 @default.
• W2059367048 countsByYear W20593670482019 @default.
• W2059367048 countsByYear W20593670482020 @default.
• W2059367048 countsByYear W20593670482021 @default.
• W2059367048 countsByYear W20593670482022 @default.
• W2059367048 countsByYear W20593670482023 @default.
• W2059367048 crossrefType "journal-article" @default.
• W2059367048 hasAuthorship W2059367048A5007208751 @default.
• W2059367048 hasAuthorship W2059367048A5057705376 @default.
• W2059367048 hasAuthorship W2059367048A5060302013 @default.
• W2059367048 hasAuthorship W2059367048A5068830652 @default.
• W2059367048 hasAuthorship W2059367048A5069534468 @default.
• W2059367048 hasAuthorship W2059367048A5090116401 @default.
• W2059367048 hasConcept C113196181 @default.
• W2059367048 hasConcept C119599485 @default.
• W2059367048 hasConcept C127413603 @default.
• W2059367048 hasConcept C133386390 @default.
• W2059367048 hasConcept C147789679 @default.
• W2059367048 hasConcept C165801399 @default.
• W2059367048 hasConcept C166972891 @default.
• W2059367048 hasConcept C172385210 @default.
• W2059367048 hasConcept C17525397 @default.
• W2059367048 hasConcept C178790620 @default.
• W2059367048 hasConcept C185592680 @default.
• W2059367048 hasConcept C192562407 @default.
• W2059367048 hasConcept C30066665 @default.
• W2059367048 hasConcept C49040817 @default.
• W2059367048 hasConceptScore W2059367048C113196181 @default.
• W2059367048 hasConceptScore W2059367048C119599485 @default.
• W2059367048 hasConceptScore W2059367048C127413603 @default.
• W2059367048 hasConceptScore W2059367048C133386390 @default.
• W2059367048 hasConceptScore W2059367048C147789679 @default.
• W2059367048 hasConceptScore W2059367048C165801399 @default.
• W2059367048 hasConceptScore W2059367048C166972891 @default.
• W2059367048 hasConceptScore W2059367048C172385210 @default.
• W2059367048 hasConceptScore W2059367048C17525397 @default.
• W2059367048 hasConceptScore W2059367048C178790620 @default.
• W2059367048 hasConceptScore W2059367048C185592680 @default.
• W2059367048 hasConceptScore W2059367048C192562407 @default.
• W2059367048 hasConceptScore W2059367048C30066665 @default.
• W2059367048 hasConceptScore W2059367048C49040817 @default.
• W2059367048 hasIssue "12" @default.
• W2059367048 hasLocation W20593670481 @default.
• W2059367048 hasOpenAccess W2059367048 @default.
• W2059367048 hasPrimaryLocation W20593670481 @default.
• W2059367048 hasRelatedWork W1994753809 @default.
• W2059367048 hasRelatedWork W2009120174 @default.
• W2059367048 hasRelatedWork W2010390859 @default.
• W2059367048 hasRelatedWork W2043673973 @default.
• W2059367048 hasRelatedWork W2053508813 @default.
• W2059367048 hasRelatedWork W2102244574 @default.
• W2059367048 hasRelatedWork W2371468566 @default.
• W2059367048 hasRelatedWork W2804544673 @default.
• W2059367048 hasRelatedWork W3092585306 @default.
• W2059367048 hasRelatedWork W4253731651 @default.
• W2059367048 hasVolume "60" @default.
• W2059367048 isParatext "false" @default.
• W2059367048 isRetracted "false" @default.

• next