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- W2059410145 abstract "Abstract The electrical characteristics of p-n junctions are often governed by surface phenomena such as depletion, accumulation and inversion layers. In this report we study the surface leakage current which would be produced by an inversion layer channel on the high resistivity side of a reverse biased abrupt junction. Analytical expressions are obtained for the variation of leakage current with reverse voltage for medium and high voltages in a number of types of channels which could exist on the surface of a semiconductor. It is found that the relationship is very similar, and in most cases identical, to the bulk behaviour, being of the form I ∝ V 1 2 Unlike previous treatments(5,6) generation-recombination current is assumed to be dominant so that the results are applicable to silicon and GaAs junctions. Comparison with experiment is made for the case of an alloyed, high voltage, silicon rectifier and quantitative agreement obtained." @default.
- W2059410145 created "2016-06-24" @default.
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- W2059410145 date "1970-08-01" @default.
- W2059410145 modified "2023-10-03" @default.
- W2059410145 title "An investigation of inversion layer induced leakage current in abrupt p-n junctions" @default.
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- W2059410145 doi "https://doi.org/10.1016/0038-1101(70)90127-9" @default.
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