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• W2059427713 abstract "A methane/hydrogen (CH4H2) plasma has been used for the gate recessing of E/D MESFETs fabricated on a highly uniform active layer formed on a semi-insulating LEC grown GaAs substrate by Si ion-implantation through an excellent plasma enhanced chemical vapour deposited silicon nitride layer and rapid thermal annealing with the same layer as cap. Threshold voltage standard deviation ( sigma Vth) as low as 16 and 31 mV, over a full 5 cm wafer, has been achieved for respectively E and D MESFETs with a gate length of 1.5 mu m." @default.
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• W2059427713 date "1991-09-01" @default.
• W2059427713 modified "2023-10-03" @default.
• W2059427713 title "Highly uniform E/D MESFETs by Si ion-implantation and methane/hydrogen plasma gate recessing" @default.
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• W2059427713 doi "https://doi.org/10.1088/0268-1242/6/9/013" @default.
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