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- W2059502148 abstract "A simulation technique for modeling optical absorption in Ge/SiGe multiple quantum well (MQW) heterostructuresis described, based on a combined 6 × 6 k • p hole wave-function a one-band effective mass electron wavefunctioncalculation. Using this model, we employ strain engineering to target a specific applications-orientedwavelength, namely 1310 nm, and arrive at a design for a MQW structure to modulate light at this wavelength.The modal confinement in a proposed device is then found using finite-element modeling, and we estimate theperformance of a proposed waveguide-integrated electroabsorption modulator." @default.
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- W2059502148 date "2010-02-11" @default.
- W2059502148 modified "2023-10-18" @default.
- W2059502148 title "Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics" @default.
- W2059502148 doi "https://doi.org/10.1117/12.843223" @default.
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