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- W2059593809 abstract "Abstract We have grown SiGe/Si quantum dot superlattices (QDSLs) via low-pressure chemical vapor deposition (LPCVD) in order to analyze their performance as thin-film solar cells. Self-assembled SiGe quantum dots were included in the base region in order to increase absorption of near-infrared (NIR) photons and to increase short-circuit current density, J sc . Rather than physically separate the epitaxial layers from the substrate prior to testing, a unique cell design was used to ensure that the epitaxial layers dominate the photocurrent from the cells. We found that open-circuit voltage V oc in our LPCVD-grown cells was comparable to that in earlier-reported cells grown by molecular beam epitaxy (MBE). The effect of both superlattice thickness and quantum dot density were also explored, and dislocations were found to sharply reduce V oc for thick superlattices with sufficiently-high dot density." @default.
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- W2059593809 date "2010-01-01" @default.
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- W2059593809 title "Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cells" @default.
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- W2059593809 doi "https://doi.org/10.1016/j.tsf.2009.10.060" @default.
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