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• W2059622864 abstract "The effect of the film thickness on the metallurgical and electrical stability of CrSiO/VO/Al film systems is investigated. The film systems are prepared on Si/SiO2 substrates by dc planar magnetron sputtering in vacuum sequence. Their electrical resistance and TCR are measured. The film systems are characterized by means of TEM and TED and, in addition, by SIMS, RBS, and spark-induced mass spectroscopy. Although the film system is thermally stable in general up to 570°C/1 h after heat treatment in vacuum, (p ≦ 1 mPa) considerable changes of properties are observed already above 350 °C for Al layers less than 300 nm and VO layers less than 20 nm thick. The reconstruction of the Al layer and insufficient formation of the VO barrier layer are discussed as causes for this behaviour. Der Einfluß der Schichtdicke auf die metallurgische und elektrische Stabilität des CrSiO/VO/Al-Schichtsystems wird untersucht. Die Schichtstapel werden auf Si/SiO2-Substrate mittels Gleichspannungs-Zerstäubung in Vakuumfolge hergestellt. Es werden der elektrische Widerstand und der TKR der Schichtstapel gemessen. Die Charakterisierung erfolgt mit TEM und TED sowie ergänzend mit SIMS, RBS und funkeninduzierter Massenspektroskopie. Obwohl das Schichtsystem bis 570 °C/l h im Vakuum getempert, (p ≦ l mPa) im allgemeinen thermisch stabil ist, werden für Al-Schichtdicken < 300 nm und VO-Schichtdicken < 20 nm erhebliche Eigenschaftsänderungen bereits ab 350 °C beobachtet. Als Urachen werden die Rekonstruktion der Al-Schicht und die mangelhafte strukturelle Ausbildung der VO-Barriereschicht diskutiert." @default.
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• W2059622864 date "1990-06-16" @default.
• W2059622864 modified "2023-09-27" @default.
• W2059622864 title "Film Thickness Effects and their Influence on the Stability of the CrSiO/VO/Al Film Systems" @default.
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• W2059622864 doi "https://doi.org/10.1002/pssa.2211190213" @default.
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