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- W2059649502 abstract "We have investigated field-effect transistor (FET) application on the photo-irradiated C60 thin film. Carrier mobility can be estimated to be 3.5 X 10-4 cm2/Vs after photo-irradiation and it shows a lower mobility than that before irradiation. Probably, it would be due to introduction of many cracks in the C60 thin film induced by polymerization due to ultraviolet light irradiation. However, considering the decrease in the threshold voltage from 12 to 2 V in the ISD-VG characteristics, carrier injection barrier clearly decreases by photo-irradiated polymerization. Furthermore, the photo-irradiated C60 FET works even in atmosphere." @default.
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- W2059649502 date "2009-04-01" @default.
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- W2059649502 title "Electronic transport properties of photo-irradiated C60" @default.
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- W2059649502 doi "https://doi.org/10.1088/1742-6596/159/1/012017" @default.
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