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- W2059692448 abstract "Line edge roughness (LER) has been the most serious problem in the development of high-resolution lithography for manufacturing semiconductor devices. LER is caused by the stochastic effects in resist pattern formation. In this study, the effects of the molecular weight and protection ratio of a resist backbone polymer on latent image fluctuation were investigated by a Monte Carlo method. From the viewpoint of latent image fluctuation, a high molecular weight and a high protection ratio were found to be favorable for the reduction in LER." @default.
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- W2059692448 date "2012-11-21" @default.
- W2059692448 modified "2023-09-26" @default.
- W2059692448 title "Effect of Molecular Weight and Protection Ratio on Latent Image Fluctuation of Chemically Amplified Extreme Ultraviolet Resists" @default.
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