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• W2059693790 abstract "A continuous random network model for amorphous silicon has been generated by computer. A relaxation process for this model has been simulated by using two different force fields, one of which, the Keating, is well-known, whereas the other, the Lifson-Warshel has only recently been used in this type of solid. Comparison of the final results obtained by the use of these two fields shows that it is only with the Lifson-Warshel field that good agreement is obtained for the computed average microscopic properties of the generated clusters. The success of this field is due to its inclusion of four-body and long-range interactions, which are absent in the Keating potential." @default.
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• W2059693790 date "1984-03-01" @default.
• W2059693790 modified "2023-10-09" @default.
• W2059693790 title "Force field treatment of an amorphous-silicon model" @default.
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• W2059693790 doi "https://doi.org/10.1016/0022-3093(84)90097-8" @default.
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