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- W2059696119 abstract "ABSTRACT We specifically studied the influence of a setback-layer thickness on the device performances so as to optimize the required value. Theoretical analysis shows that an optimized setback-layer thickness is available to effectively reduce the barrier height while maintain good device performances. In this work, the effects of a setback-layer thickness on the DC and RF performances of an InGaP/GaAs heterojunction bipolar transistor (HBT) are investigated. Based on the theoretical analysis, the optimized setback-layer thickness W SB is about of 10~30A for analog amplification. On the other hand, for digital saturated logic application, i.e., a small offset voltage with an acceptable current gain, the optimized W SB could be up to 50 A. Therefore, this analysis and predication may cause the considerable promise for practical circuit applications. Keywords: Polysilicon Resistor, Diffused Resistor, TCR. 1. INTRODUCTION Recently, many researchers have focused on the aluminum-free In" @default.
- W2059696119 created "2016-06-24" @default.
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- W2059696119 date "2004-04-02" @default.
- W2059696119 modified "2023-09-23" @default.
- W2059696119 title "Comprehensive analysis of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different thickness of setback layers" @default.
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- W2059696119 doi "https://doi.org/10.1117/12.522286" @default.
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