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- W2059766073 abstract "ZnO nanostructures have been synthesized on p-type silicon substrates using a two-step, spontaneous oxidation of Zn films method at room temperature. The samples both with and without a thin layer of gold in different positions have been spontaneously oxidized in a humid atmosphere for seven days to form nanosheets and ball-cactus like nanostructures. Diverse morphologies of hierarchical ZnO nanostructures have been obtained by annealing the samples at 700 °C in a nitrogen atmosphere for 1 h. A growth mechanism has been proposed for the formation of different ZnO nanostructures. It was found that the band-gap emission can be greatly improved and that the defect emission is suppressed to a noise level when a thin layer of Au was deposited between the Zn and the Si substrate. Moreover, our results show that the ZnO/p-Si heterojunction exhibits good performance for visible spectrum detection." @default.
- W2059766073 created "2016-06-24" @default.
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- W2059766073 date "2014-03-01" @default.
- W2059766073 modified "2023-09-26" @default.
- W2059766073 title "Synthesis of ZnO nanostructures by spontaneous oxidation of Zn films on p-type silicon substrates" @default.
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- W2059766073 doi "https://doi.org/10.1016/j.jallcom.2013.12.106" @default.
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