Matches in SemOpenAlex for { <https://semopenalex.org/work/W2059783232> ?p ?o ?g. }
- W2059783232 abstract "Ge-based devices, currently being pursued as replacement of their Si counterparts, typically contain a germanium oxide layer next to the substrate. Here we show using first-principles calculations that, in contrast to Si technology, hydrogenation and fluorination are not effective ways of passivating Ge–GeO2 interfacial Pb centers with a Ge dangling bond (DB). Moreover, we identify DB geometries that differ from the Pb structures and we find that the Ge–GeO2 boundary has a higher atomic-scale roughness than the Si–SiO2 interface. These key differences in interface morphology and defect properties are consistent with experimental data." @default.
- W2059783232 created "2016-06-24" @default.
- W2059783232 creator A5077906043 @default.
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- W2059783232 date "2009-12-28" @default.
- W2059783232 modified "2023-09-27" @default.
- W2059783232 title "Morphology and defect properties of the Ge–GeO2 interface" @default.
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- W2059783232 doi "https://doi.org/10.1063/1.3280385" @default.
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