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- W2059893886 abstract "The electrical characteristics of fluorine implanted a-Si:H thin films at high fields have been studied. Multiple fluorine implantation into a-Si:H thin films has been used to achieve a relatively flat fluorine profile, and the implanted fluorine concentrations range from 2 × 1017 to 6 × 1021 cm−3. The dark electrical conductivities of these samples were measured in vacuum under various field strengths at temperatures from 50 to 400 K. It was found that all the samples show nonlinear transport behaviour at high fields (E ≥ 103 V cm−1). In particular, the conductivity of most of the samples at temperatures that are not too low shows an electric field dependence of the form σ = exp[A + (E/ EH)γ]. However, for the sample with the highest fluorine concentration (6 × 1021 cm−3) up to 300 K and for samples of lower fluorine concentration at sufficiently low temperatures, the field dependence changes to the form of a power law, as σ ∝ Eγ at E ≥ 105 V cm−1. These high field nonlinear transport results are discussed in terms of a hopping model and field-induced tunnelling between the band tail states." @default.
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- W2059893886 date "1996-10-01" @default.
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- W2059893886 title "Electrical characteristics of fluorine implanted a-Si:H thin films at high fields" @default.
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- W2059893886 doi "https://doi.org/10.1016/0254-0584(96)80136-2" @default.
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