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- W2059897271 abstract "Poly-Si thin films with super large grain size of 300 μm are obtained by using the solid-phase crystallization (SPC) method. It is found that the deposition parameters of the starting a-Si: H films are very important factors in the SPC process. Large grain size can be achieved by depositing the starting a-Si: H films at high substrate temperatures with high deposition rate which causes the starting material to be more disordered and to have a low H content. Electrical and optical measurements of the crystallized films are taken to characterize the properties of the poly-Si films." @default.
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- W2059897271 date "1994-08-16" @default.
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- W2059897271 title "Super large grain size of poly-Si obtained by using the solid-phase crystallization method" @default.
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- W2059897271 doi "https://doi.org/10.1002/pssa.2211440219" @default.
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