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- W2059923905 abstract "Abstract To obtain low contact resistance at the GaAs/AlGaAs regrowth interface in the selective growth of GaAs, growth conditions and pretreatment for cleaning the AlGaAs surface and forming a compositional grading layer have been investigated by employing reduced pressure MOVPE. When Si-doped GaAs is regrown on Si-doped AlGaAs at a substrate temperature of 700°C with an AsH 3 /TMG molar flow ratio of 30, the density of depleted carriers created at the GaAs/AlGaAs regrowth interface reaches a value as high as 10 13 cm -2 . The current-voltage relation of this heterostructure shows non-ohmic I – V characteristics. However, when Si-doped GaAs is regrown at a substrate temperature higher than 700°C with an AsH 3 /TMG molar flow ratio smaller than 10, the carrier depletion region disappears in the carrier profile trace and contact resistance at the GaAs/AlGaAs regrowth interface is minimized to as low as 10 -5 to 10 -6 ω cm 2 . From secondary ion mass spectroscopic analysis, it is found that a compositional grading layer is formed at the regrowth interface during growth. A model is proposed to explain compositional grading layer formation based upon Si neutral-pair diffusion." @default.
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- W2059923905 date "1991-01-01" @default.
- W2059923905 modified "2023-09-24" @default.
- W2059923905 title "Low contact-resistance GaAs/AlGaAs regrowth interfaces and compositional grading layer formation during growth by metalorganic vapor phase epitaxy" @default.
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- W2059923905 doi "https://doi.org/10.1016/0022-0248(91)90500-5" @default.
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