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- W2060233323 abstract "Desorption behavior of arsenic on InAs and GaAs, and phosphorus on InP and GaP surfaces has been studied by the specular-beam intensity change of reflection high-energy electron diffraction when the group-V-cracker shutter is closed during growth interruption (group-III shutter closed) in gas-source molecular-beam epitaxy. We obtained an activation energy of 55 kcal/mol for arsenic desorption from InAs at high temperatures, and 38 kcal/mol at low temperatures. This differences is explained. Compared with arsenic on InAs, phosphorus on InP has a very large desorption rate constant at high temperatures and only one activation energy of 50 kcal/mol. For GaAs and GaP, the desorption activation energy for arsenic on GaAs is 58 kcal/mol, phosphorus on GaP 43 kcal/mol." @default.
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- W2060233323 date "1993-03-01" @default.
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- W2060233323 title "A study of group-V element desorption from InAs, InP, GaAs and GaP by reflection high-energy electron diffraction" @default.
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- W2060233323 doi "https://doi.org/10.1016/0022-0248(93)90382-7" @default.
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