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• W2060261388 abstract "Abstract The electrical activation of P and K ions, implanted in glow-discharge-deposited hydrogenated amorphous Si films, is analysed as a function of annealing temperature and time. To single out the effect of radiation damage, Si ions have also been implanted in a separate set of samples. For all the implanted dopants and for concentrations up to about 3 × 1019 cm−3, it is found that the conductivity increases with increasing annealing temperature, reaching a maximum between 300 and 350°C, irrespective of film deposition temperature between 190 and 300°C. For the higher implanted concentrations, the highest conductivity is reached after 200–250°C annealing." @default.
• W2060261388 created "2016-06-24" @default.
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• W2060261388 date "1993-01-01" @default.
• W2060261388 modified "2023-09-24" @default.
• W2060261388 title "Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous silicon" @default.
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• W2060261388 doi "https://doi.org/10.1080/13642819308230222" @default.
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