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- W2060287337 abstract "Design and characteristics of NAMIS-EAROM cells alterable with voltages of about 10 V are demonstrated. The NAMIS cell employs a very thin silicon nitride film grown by direct thermal nitridation of a silicon substrate as the first insulating layer in a stacked-gate structure. Carrier injection into a floating gate is greatly enhanced due to low energy-barrier heights of silicon nitride. Further, a device structure suitable for low-voltage write/erase is presented. Writing is performed by using a single pulse of 10 V, 1 ms. Erasing is achieved by pulses of -5 and 10 V, 1 ms. Repetition of write/erase cycling is possible more than 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> times. Memory retention is expected to be much longer than 10 years at 125°C. The nonvolatility in the NAMIS cell is compatible with low-voltage operation, write/erase cycling, and read capacity over conventional FAMOS-type or MNOS-type memories." @default.
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- W2060287337 date "1979-06-01" @default.
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- W2060287337 title "Low-voltage alterable EAROM cells with nitride-barrier avalanche-injection MIS (NAMIS)" @default.
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