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• W2060546985 abstract "We have examined the formation mechanisms of InAs quantum dots (QDs) via annealing In islands under As flux. We report two distinct mechanisms, droplet epitaxy (DE) and solid phase epitaxy (SPE), which depend on As surface coverage. On c(4 × 4) GaAs surfaces, QDs form by DE. For c(4 × 4)α, one-to-one conversion from In islands to InAs QDs is observed. For c(4 × 4)β, lower densities of larger QDs are observed, presumably due to enhanced In surface diffusion in the absence of metastable Ga-As dimers. For the As capped surface, In deposition leads to an amorphous film, from which QDs nucleate by SPE during annealing." @default.
• W2060546985 created "2016-06-24" @default.
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• W2060546985 date "2013-09-23" @default.
• W2060546985 modified "2023-09-28" @default.
• W2060546985 title "Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands" @default.
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• W2060546985 doi "https://doi.org/10.1063/1.4822052" @default.
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