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• W2060639122 abstract "Thermal and electrical properties of Mg–Sb films were investigated for evaluation as phase-change memory materials. Electrical resistance of as-deposited amorphous Mg–Sb films decreases with increasing temperature until an abrupt drop at the crystallization temperature, with a total of 4 orders-of-magnitude resistance change. The crystallization temperatures increases from 140 °C to 190 °C as decreasing Sb content from 72.4 to 45.9 at.%, and the melting temperature remains at around 577 °C. The temperature corresponding to 10-year data-retention is 94 °C (54.6 at.% Sb) and 128 °C (41.3 at.% Sb), respectively. Optimal compositions are proposed to be 40 to 50 at.% Sb." @default.
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• W2060639122 date "2010-10-01" @default.
• W2060639122 modified "2023-10-18" @default.
• W2060639122 title "Phase transformation in Mg–Sb thin films" @default.
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• W2060639122 doi "https://doi.org/10.1016/j.tsf.2010.05.018" @default.
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