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- W2060656144 abstract "Abstract Monolithic SiNx and composite SiNx–TiN films were prepared on a Si wafer at 700 °C by a plasma chemical vapor deposition technique designed to inject ethanol solution of alkoxides (hexa-methyl-disiloxane and titanium tetra-ethoxide) at a feed rate of 0.05–0.3 ml min−1 into a thermal Ar/H2/N2 plasma. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy, electrical resistivity, and Vickers micro-hardness. The silicon nitride was found to be amorphous, designated as SiNx, by XRD. SiNx films obtained at a feed rate of 0.05 ml min−1 exhibited the composition near Si3N4 with densely packed particles of 0.1 μm in size. In composite SiNx–TiN films, the N content was 30–35 and 40–45 at.% at a Si fraction of 0.1–0.5 and above 0.5, respectively, and the Ti and Si contents changed linearly and complementarily with the solution composition. SEM showed that films are 1–1.5 μm thick, possessing particle size of 300–400 nm at a Si fraction of 0.1, which increases to 1–2 μm at fractions higher than 0.3. The resistivity and microhardness of the monolithic TiN and composite SiNx–TiN films were measured." @default.
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- W2060656144 date "2002-11-01" @default.
- W2060656144 modified "2023-10-12" @default.
- W2060656144 title "Preparation of SiNx and composite SiNx–TiN films from alkoxide solutions by liquid injection plasma CVD" @default.
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- W2060656144 doi "https://doi.org/10.1016/s0040-6090(02)00768-x" @default.
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